Analysis of magnetic field effect on 3D melt flow in CZ Si growth

被引：43

作者：

Ivanov, NG

Korsakov, AB

Smirnov, EM

Khodosevitch, KV

Kalaev, VV

Makarov, YN

Dornberger, E

Virbulis, J

von Ammon, W

机构：

[1] STR Inc, Richmond, VA 23255 USA

[2] State Tech Univ, St Petersburg, Russia

[3] Soft Impact Ltd, St Petersburg, Russia

[4] Wacker Siltron AG, Burghausen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 1-2期

关键词：

magnetic field; turbulent convection; Czochralski method; silicon;

D O I：

10.1016/S0022-0248(02)02263-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：183 / 188

页数：6

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