Analysis of magnetic field effect on 3D melt flow in CZ Si growth

被引：43
|
作者：
Ivanov, NG
Korsakov, AB
Smirnov, EM
Khodosevitch, KV
Kalaev, VV
Makarov, YN
Dornberger, E
Virbulis, J
von Ammon, W
机构：
[1] STR Inc, Richmond, VA 23255 USA
[2] State Tech Univ, St Petersburg, Russia
[3] Soft Impact Ltd, St Petersburg, Russia
[4] Wacker Siltron AG, Burghausen, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 1-2期
关键词：
magnetic field; turbulent convection; Czochralski method; silicon;
D O I：
10.1016/S0022-0248(02)02263-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is numerically simulated using a hybridization of the Reynolds-averaged Navier-Stokes approach and large-eddy simulation. The proposed RANS/LES model is based on a differential model of turbulence. The results obtained with three computational models differing in the number of considered hot-zone components are presented and compared with the experimental data for temperature in the melt and along the melt-crucible surface. The influence of electrical currents in the crystal on melt motion reorganization is studied. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：183 / 188
页数：6
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