Negative magnetoresistance and magnetic susceptibility of boronated graphite

被引:8
|
作者
Hishiyama, Y
Kaburagi, Y
Sugihara, K
机构
[1] Musashi Inst Technol, Fac Engn, Setagaya Ku, Tokyo 1588557, Japan
[2] Nihon Univ, Coll Pharm, Funabashi, Chiba 27485555, Japan
来源
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2000年 / 340卷
关键词
boronated graphite; magnetic susceptibility; negative magnetoresistance;
D O I
10.1080/10587250008025489
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Boronated graphite specimens were prepared from a grafoil heat-treated at 3000 degrees C for 30 min. The transport properties, such as the electrical resistivity, Hall coefficient and transverse magnetoresistance, and the total magnetic susceptibility were measured for the pristine and boronated specimens. For the specimen with high boron concentration, a negative transverse magnetoresistance at liquid nitrogen temperature and weakly temperature-dependent resistivity were observed. Assuming that the negative magnetoresistance is due to a three-dimensional weak localization, a calculation was carried out for the temperature dependence of the resistivity and transverse magnetoresistance at low temperatures in terms of Slonczewski-Weiss-McClure band model and a weak localization theory obtained by extending Kawabata's theory. The experimental finding agreed well with that the calculation predicted.
引用
收藏
页码:337 / 342
页数:6
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