Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics

被引：27

作者：

Shen, CC ^{[1
]}

Murguia, J

Goldsman, N

Peckerar, M

Melngailis, J

Antoniadis, DA

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[2] MIT, Dept Elect Engn, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 02期

关键词：

current source; reliability; threshold stability;

D O I：

10.1109/16.658680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An asymmetrical MOSFET structure is formed by using a focused-ion-beam implanter to create a p(+) channel doping next to the source. This work builds on previous efforts by providing a uniquely tailored doping profile through the use of localized beams. An investigation shows that the output resistance improves, detrimental hot-electron effects diminish, and threshold voltage stabilizes as channel length is reduced. The improved output resistance is especially beneficial to analog applications where enhanced current source characteristics often lead to significantly better circuit operation. Improvements in device performance are attributed to the reduction of the pinchoff region, which is clarified with the help of detailed hydrodynamic device simulations. A two-transistor equivalent circuit model has been developed which reflects the device structure.

引用

页码：453 / 459

页数：7

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