Effects of Coulomb interaction in intentionally disordered semiconductor superlattices

被引：20
作者：
Richter, G [1 ]
Stolz, W
Thomas, P
Koch, SW
Maschke, K
Zvyagin, IP
机构：
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland
[4] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
QUANTUM-WELLS; OPTICAL-PROPERTIES; LOCALIZATION; TEMPERATURE; THICKNESS;
D O I：
10.1006/spmi.1996.0481
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The interplay between disorder and electron-electron interaction is studied using measurements of the vertical de conductivity of intentionally disordered GaAs/Al0.3Ga0.7As superlattices. At low temperatures a quasimetallic behavior is observed even for large disorder which is attributed to an inhomogeneous charge distribution reducing the disorder potential. At low doping levels and low temperatures, exchange-correlation interaction leads to an inhomogeneous charge distribution over the wells of ordered superlattices similar to a one-dimensional Wigner lattice. (C) 1997 Academic Press Limited.
引用
收藏
页码：475 / 480
页数：6
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