Resistivity transients in solution-processed transparent ZnO thin films as a function of UV illumination wavelength

被引:4
|
作者
Fuchs, Peter [1 ]
Steinhauser, Jerome [1 ]
Romanyuk, Yaroslav E. [1 ]
Tiwari, Ayodhya N. [1 ]
机构
[1] Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 06期
关键词
conductivity; resistivity transients; thin films; transparent conductive oxide; ZnO; ZINC-OXIDE; PHOTOCONDUCTIVITY; CHEMISORPTION; CONDUCTIVITY; ADSORPTION; BEHAVIOR;
D O I
10.1002/pssa.201600853
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent conductive zinc oxide thin films are deposited by chemical bath deposition (CBD) followed by exposure to UV-visible light to increase their electrical conductivity. Selected spectral bandwidths are filtered from a Hg(Xe) lamp in the range of 280-546nm to investigate resistivity transients as a function of the illumination wavelength. The conductivity increases by a factor of approximate to 10(3) for illumination wavelengths shorter than the fundamental absorption edge, as predicted by the ionized oxygen species adsorption model. If the thin film thickness exceeds the UV radiation penetration depth significantly (1 mu m), the conductivity can most effectively be increased by exposing the films to wavelengths situated in the Urbach tail at approximate to 365nm as both, absorptance and transmittance lie above 20%, enabling the radiation to penetrate the whole layer, while still locally generating enough electron-hole pairs for the desorption of chemisorbed species.
引用
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页数:6
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