1EV GANxAS1-x-ySBy MATERIAL FOR LATTICE-MATCHED III-V SOLAR CELL IMPLEMENTATION ON GAAS AND GE

被引：0

作者：

Ng, Tien Khee ^{[1
]}

Yoon, Soon Fatt ^{[1
,2
]}

Tan, Kian Hua ^{[1
]}

Loke, Wan Khai ^{[1
]}

Wicaksono, Satrio ^{[1
]}

Lew, Kim Luong ^{[1
]}

Chen, Kah Pin ^{[1
,2
]}

Fitzgerald, Eugene A. ^{[3
,4
]}

Pitera, Arthur J. ^{[3
]}

Ringel, Steve A. ^{[5
]}

Carlin, Andrew M. ^{[5
]}

Gonzalez, Maria ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore

[2] Singapore MIT Alliance, Singapore 637460, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Singapore MIT Alliance, Cambridge, MA 02139 USA

[5] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

基金：

新加坡国家研究基金会;

关键词：

GROWTH; GANAS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effect of different arsenic species (As-2 or As-4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/GaNAsSb/GaAs p(+) n(-) n(+) devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As-2 overpressure for GaNAsSb growth.

引用

页码：1130 / +

页数：2

共 8 条

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[7] Inverted Metamorphic III-V Triple-Junction Solar Cell with a 1 eV CuInSe2 Bottom Subcell
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[8] Short-period strain-balanced GaAs1-xNx/InAs(N) superlattices lattice-matched to Inp(001):: a new material for 0.4-0.6 eV mid IR applications
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