Study of field electron emission phenomenon associated with N-doped amorphous diamond thin films

被引：43
作者：
Chen, J
Wei, AX
Deng, SZ
Lu, Y
Zheng, XG
Chen, DH
Mo, D
Peng, SQ
Xu, NS [1 ]
机构：
[1] Zhongshan Univ, Dept Phys, Canton 510275, Peoples R China
[2] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100864, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词：
D O I：
10.1116/1.589884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experiments have been carried out to study the field electron emission characteristics of nitrogen-doped amorphous diamond thin films prepared by magnetic-field filtered carbon ion deposition. A transparent anode imaging technique is used to record the spatial distribution of individual emission sites and the total emission current-voltage characteristics of the films. Also, the optical and electrical properties of the films having different nitrogen-doping levels have been studied. A correlation has been found to exist between the field-emission characteristics and the band gap of the films; i.e., it is found that the films of relatively small optical band gap have low turn-on fields. (C) 1998 American Vacuum Society. [S0734-211X(98)09102-1].
引用
收藏
页码：697 / 699
页数：3
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