A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

被引：15

作者：

Vidojkovic, Maja ^{[1
]}

Sanduleanu, Mihai ^{[2
]}

van der Tang, Johan ^{[3
]}

Baltus, Peter ^{[1
,4
]}

van Roermund, Arthur ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Elect Engn, Mixed Signal Microelect Grp, EH 5-29, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res, NL-5656 Eindhoven, Netherlands

[3] IMEC, Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[4] NXP Semicond, Innovat Ctr RF, NL-5656 AA Eindhoven, Netherlands

来源：

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年

关键词：

Low Noise Amplifiers; broadband; multi-mode; multi-band;

D O I：

10.1109/RFIC.2007.380831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

引用

页码：53 / +

页数：2

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