Two-stage co-evaporated CuSbS2 thin films for solar cells

被引:90
作者
Wan, Lei [1 ]
Ma, Cheng [1 ]
Hu, Ke [1 ]
Zhou, Ru [1 ]
Mao, Xiaoli [2 ]
Pan, Shuhao [1 ]
Wong, Lydia Helena [3 ,4 ]
Xu, Jinzhang [1 ]
机构
[1] Hefei Univ Technol, Sch Elect Engn & Automat, Hefei 230009, Anhui, Peoples R China
[2] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[4] Nanyang Technol Univ, Energy Res Inst NTU, Singapore 639798, Singapore
关键词
Vapor deposition; Thin films; Semiconductors; Photovoltaics; COPPER-ANTIMONY-SULFIDE; ABSORBER; GROWTH; TEMPERATURE; SB2S3;
D O I
10.1016/j.jallcom.2016.04.193
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
CuSbS2 is a promising absorber for thin film solar cells because of its suitable band gap, high absorption coefficient, low cost and nontoxic characteristics. Here we report CuSbS2 thin films fabricated from three source co-evaporation for the first time. We used two-stage co-evaporation process in which Sb-rich precursor was first deposited by Cu, Sb and S co-evaporation at a lower substrate temperature (typically similar to 230 degrees C) followed by Sb and S co -evaporation at a relatively elevated temperature (typically similar to 370 -390 degrees C). This process leads to an improved crystallinity and phase purity of CuSbS2. The phases of the deposited films are extremely sensitive to the substrate temperature and film composition. Excess of copper resulted in a separation of Cu12Sb4S13 secondary phase from CuSbS2, while excess of antimony resulted in a separation of Sb2S3. CuSbS2 films with good crystallinity and improved phase purity can be obtained at second stage substrate temperature of 370 degrees C. Finally a thin film solar cell was fabricated using stoichiometric CuSbS2 absorber with Mo/CuSbS2/CdS/ZnO/ZnO:Al/Ag structure, achieving an encouraging 1.9% power conversion efficiency with one of the highest open-circuit voltage of 526 mV for CuSbS2 solar cells. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:182 / 190
页数:9
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