Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition

被引：1032
作者：
Cai, Weiwei
Moore, Arden L.
Zhu, Yanwu
Li, Xuesong
Chen, Shanshan
Shi, Li [1 ]
Ruoff, Rodney S.
机构：
[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA
来源：
NANO LETTERS | 2010年 / 10卷 / 05期
基金：
美国国家科学基金会;
关键词：
Thermal conductivity; thermal interface resistance; graphene; Raman; measurement; PYROLYTIC GRAPHITE; PHONON TRANSPORT; CARBON NANOTUBES; LAYER GRAPHENE; LARGE-AREA; CONDUCTIVITY; FILMS; SUPERLATTICES; GAS;
D O I：
10.1021/nl9041966
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/-320) W/m K and (28 + 16/-9.2) MW/m(2) K For the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/-1050) W/m K near 350 K and becomes (1400 + 500/-480) W/m K at about 500 K.
引用
收藏
页码：1645 / 1651
页数：7
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