InGaAs Msm photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

被引:12
作者
Cheng, Yongpeng [1 ,2 ]
Ikku, Yuki [1 ,2 ]
Takenaka, Mitsuru [1 ,2 ]
Takagi, Shinichi [1 ,2 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan
[2] Japan Sci & Technol Agcy CREST, Kawaguchi, Saitama, Japan
关键词
waveguide photodetector; III-V CMOS photonics;
D O I
10.1587/elex.11.20140609
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP photonic-wire wave-guide has been demonstrated by using III-V CMOS photonics platform. Owing to a Schottky contact between Ni and p-InGaAs, the MSM PD operation is obtained with a dark current of 270 nA at 1 V bias voltage. The 20-mu m-long waveguide InGaAs PD exhibits responsivity of around 0.4 A/W and broadband operation covering the C- and L-bands, enabling wavelength division multiplexing (WDM) optical interconnects.
引用
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页数:8
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