Incubation time for chemical vapor deposition of copper from hexafluoroacetylacetonate-copper(I)-vinyltrimethoxysilane

被引：14

作者：

Hong, LS ^{[1
]}

Jeng, MG ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Sect 4, Taipei 106, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 1-2期

关键词：

MOCVD; copper; incubation time; Cu(hfac)(VTMOS); heterogeneous nucleation;

D O I：

10.1016/S0169-4332(00)00278-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The incubation time in a metal-organic chemical vapor deposition (MOCVD) system using copper (I)-hexafluoroacetylacetonate vinyltrimethoxysilane (Cu(hfac)(VTMOS)) as the precursor to grow copper films has been investigated. For film deposition on a TiN/Si substrate in the presence of H-2 at 473 K, the incubation time is 88 min, while it decreases to 3.3 min on a Pt-seeded surface. The incubation phenomenon is attributed to a heterogeneous nucleation process involving surface reactions of precursor. By using a first-order reaction approximation, the incubation time is correlated with the nucleation rate constant to give an activation of 5.5 kcal/mol in a temperature range of 463 to 498 K, indicative of a surface-reaction controlled regime concerning heterogeneous Cu nucleation. Observation of the very early stage of film growth by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) reveals that growth of nucleus prevails in the period of incubation time. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：149 / 154

页数：6

共 21 条

[1] CARRIER-GAS EFFECTS ON CHARACTERISTICS OF COPPER CHEMICAL-VAPOR-DEPOSITION USING HEXAFLUORO-ACETYLACETONATE-COPPER(1) TRIMETHYLVINYLSILANE [J].

AWAYA, N ;

ARITA, Y .

THIN SOLID FILMS, 1995, 262 (1-2) :12-19

[2] THE EFFECT OF ADDING HEXAFLUOROACETYLACETONE ON CHEMICAL-VAPOR-DEPOSITION OF COPPER USING CU(I) AND CU(II) PRECURSOR SYSTEMS [J].

AWAYA, N ;

OHNO, K ;

ARITA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) :3173-3179

[3] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION [J].

COHEN, SL ;

LIEHR, M ;

KASI, S .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :50-52

[4] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HARA, K ;

KOJIMA, T ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1107-L1109

[5] Atomic force microscopy study of the initial growth of copper films by chemical vapor deposition from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane: An indication of a surface electron transfer reaction [J].

Hong, LS ;

Lin, MZ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (6A) :L711-L713

[6]

HONG LS, UNPUB JPN J APPL PHY

[7] SELECTIVE AND BLANKET COPPER CHEMICAL-VAPOR-DEPOSITION FOR ULTRA-LARGE-SCALE INTEGRATION [J].

JAIN, A ;

KODAS, TT ;

JAIRATH, R ;

HAMPDENSMITH, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2107-2113

[8] CONTROL OF SELECTIVITY DURING CHEMICAL VAPOR-DEPOSITION OF COPPER FROM COPPER(I) COMPOUNDS VIA SILICON DIOXIDE SURFACE MODIFICATION [J].

JAIN, A ;

FARKAS, J ;

KODAS, TT ;

CHI, KM ;

HAMPDENSMITH, MJ .

APPLIED PHYSICS LETTERS, 1992, 61 (22) :2662-2664

[9] Growth behavior of copper metalorganic chemical vapor deposition using the (hfac)Cu(VTMOS) precursor on titanium nitride substrates [J].

Jun, CH ;

Kim, YT ;

Baek, JT ;

Yoo, HJ ;

Kim, DR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (06) :3214-3219

[10] LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (LTMOCVD) OF DEVICE-QUALITY COPPER-FILMS FOR MICROELECTRONIC APPLICATIONS [J].

KALOYEROS, AE ;

FENG, A ;

GARHART, J ;

BROOKS, KC ;

GHOSH, SK ;

SAXENA, AN ;

LUEHRS, F .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) :271-276

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