Formation of aluminum tunnel pits arrayed using SU-8 masks with UV-assisted thermal imprint lithography

被引：7

作者：

Jang, Joo-Hee ^{[1
]}

Choi, Woo-Sung ^{[1
]}

Kim, Nam-Jeong ^{[1
]}

Lee, Chang-Hyoung ^{[1
]}

Kim, Taek-You ^{[1
]}

Park, Chan ^{[3
]}

Suh, Su-Jeong ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Suwon 440746, South Korea

[3] Pukyong Natl Univ, Div Engn & Mat Sci, Pusan 608739, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 12期

关键词：

Imprint lithography; SU-8; Aluminum; Electrochemical etching; Tunnel pits; PHOTORESIST; FOIL;

D O I：

10.1016/j.mee.2010.07.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For high capacitance aluminum electrode was selectively etched with square of tunnel pits. SU-8 photo-resist as etching mask was patterned on aluminum by UV-assisted thermal imprint lithography and then surface area of aluminum was increased by electrochemical etching, where tunnel pits were generated regularly and were approximately 20 mu m in length, 3.5 mu m in width, resulting in 10(6) tunnels per cm(2) of surface. Consequently, the capacitance of the dielectric showed an increase of up to four times higher than the unpatterned surface. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2610 / 2613

页数：4

共 20 条

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