Thermochemistry and growth mechanism of SiC nanowires

被引：57

作者：

Chen, Jianjun ^{[1
]}

Ding, Lijuan ^{[1
]}

Xin, Lipeng ^{[2
]}

Zeng, Fan ^{[1
]}

Chen, Jun ^{[3
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Mat Engn, Coll Mat & Text, Hangzhou 310018, Zhejiang, Peoples R China

[2] Xi An Jiao Tong Univ, Multidisciplinary Mat Res Ctr, Frontier Inst Sci & Technol, Xian 710049, Shaanxi, Peoples R China

[3] Univ Wollongong, Intelligent Polymer Res Inst, Wollongong, NSW 2522, Australia

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2017年 / 253卷

关键词：

SiC nanowires; Thermodynamics; Growth mechanism; Carbothermal reduction; Si-C-O system; CHEMICAL-VAPOR-DEPOSITION; LARGE-SCALE SYNTHESIS; C-O SYSTEM; CARBOTHERMAL REDUCTION; SILICON-CARBIDE; SEMICONDUCTOR NANOWIRES; SOL-GEL; CATALYST; THERMODYNAMICS; PHOTOLUMINESCENCE;

D O I：

10.1016/j.jssc.2017.06.009

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 <= T <= 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

引用

页码：282 / 286

页数：5

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