Formation of GaN nano-column structure by nitridation

被引：17

作者：

Hashimoto, A ^{[1
]}

Motiduki, T ^{[1
]}

Wada, H ^{[1
]}

Yamamoto, A ^{[1
]}

机构：

[1] Fukui Univ, Fac Engn, Dept Elect & Elect Engn, Fukui 910, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

GaN nano-column structure; nitridation;

D O I：

10.4028/www.scientific.net/MSF.264-268.1129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new fabrication method coupled with the electrochemical anodization and the thermal nitridation techniques to realize the nano-column structures of GaN are proposed. SEM observation and X-ray analysis show that GaN nano-column structures with the average diameter of 200 nm have been successfully formed from porous GaAs by the new method.

引用

页码：1129 / 1132

页数：4

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