Hydrogen Sensing Characteristics of Pt Schottky Diodes on ((2)over-bar01) and (010) Ga2O3 Single Crystals

被引：26
作者：
Jang, Soohwan [1 ]
Jung, Sunwoo [1 ]
Kim, Jihyun [2 ]
Ren, Fan [3 ]
Pearton, Stephen J. [4 ]
Baik, Kwang Hyeon [5 ]
机构：
[1] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[2] Korea Univ, Dept Chem Engn, Seoul 02841, South Korea
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[5] Hongik Univ, Sch Mat Sci & Engn, Sejong 30016, South Korea
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
OXYGEN VACANCY; GALLIUM OXIDE; THIN-FILMS; ADSORPTION; BETA-GA2O3; SENSORS; SURFACE; ACTIVATION; DEVICES; WATER;
D O I：
10.1149/2.0261807jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the hydrogen sensing characteristics of Pt Schottky diodes on ((2) over bar 01) and (010) beta-Ga2O3 bulk crystals. The Pt Schottky diodes on beta-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the ((2) over bar 01) Ga2O3 diode sensor was as high as 7.86 x 10(7) (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both beta-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N-2, CO, CO2, O-2, CH4, NO2, and NH3. Our finding suggests that the Pt Schottky diodes on beta-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity. (C) The Author(s) 2018. Published by ECS.
引用
收藏
页码：Q3180 / Q3182
页数：3
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