Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys

被引：16

作者：

Bauer, M. ^{[1
]}

Thomas, S. G. ^{[1
]}

机构：

[1] ASM Amer Inc, Phoenix, AZ 85034 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Silicon; Carbon precursors; Selective epitaxial growth (SEG); Chemical vapor deposition (CVD); NMOS stressor; Si:C alloy; Inhibitor; THERMAL-DECOMPOSITION; VAPOR-DEPOSITION; ATOMIC CHLORINE; SILICON; GROWTH; PYROLYSIS; SURFACE; SILANE; TRISILANE; MECHANISM;

D O I：

10.1016/j.tsf.2009.10.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we will discuss non-traditional chemical precursors for carbon-doped silicon (Si:C) that enable improved manufacturability through higher growth rates and new deposition temperature regimes commensurate with the drive to lower thermal budgets of integration of CMOS and DRAM platforms. Among the silicon precursors to be discussed are dichlorodisilane (Si(2)Cl(2)H(4)), dichlorosilane and Silcore(R) (Si(3)H(8)). New carbon precursors disilylmethane ((SiH(3))(2)CH(2)) and propylene (C(3)H(6)) are discussed and compared with conventional monomethylsilane (SiH(3)CH(3)). For high volume manufacturing, high selective epitaxial growth rates are necessary for high throughput and low cost of ownership. Both, high GR and low temperatures enable high substitutional carbon levels [C](sub) in dilute Si:C alloys. Advantages and disadvantages of different Chemical Vapor Deposition (CVD) strategies such as a co-flow process, a Cyclic Deposition/Etch (CDE) process and a "hybrid" process are discussed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S200 / S203

页数：4

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