Analog Circuits Using Double-Gate Multilayer MoS2 Field-Effect Transistor for Sensor Applications

被引:1
作者
Vasishta, Sudhanva [1 ]
Wang, Xiao [1 ]
Rodder, Michael [1 ]
Raghunandan, K. R. [2 ]
Viswanathan, T. R. [1 ]
Dodabalapur, Ananth [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA
[2] Skyworks Solut Inc, Austin, TX 78701 USA
基金
美国国家科学基金会;
关键词
Analog circuits; chopper; double-gate (DG); field-effect transistor (FET); flicker-noise; MoS2; quantum mechanical calculations; FLICKER NOISE;
D O I
10.1109/TED.2022.3170283
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The advantages of novel double-gate (DG) multilayer MoS2 transistors for analog circuit applications are presented. Such components are shown to be especially useful in signal-conditioning circuits in sensor instrumentation systems. The nearly symmetric DG device architecture can be exploited in the design of analog front-end circuits to mitigate the effect of flicker (1/f) noise. Quantummechanical calculations validated by comparisons with experimental data indicate that with active semiconductor layer thickness >2 monolayers (MLs), the sheet carrier density per gate is increased relative to single gate field-effect transistors (FETs) resulting in a lower noise figure. Calculated normalized noise spectralpower densities for the single and DG thin-film transistors (TFTs) at the same gate bias clearly show that the DG devices have lower noise than the single gate devices. In sensors for low-frequency signals such as bio-signals, DG transistors allowconvenient direct coupling of the signal through one gate, with the other gate available formixingwith a high-frequency signal and/or applying bias voltages without requiring large capacitors. Such circuits are well-suited for use with silicon CMOS technology using back-end-of-the-line (BEOL) fabrication methods.
引用
收藏
页码:3470 / 3476
页数:7
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