Characteristics of polarity-controlled ZnO films fabricated using the homoepitaxy technique

被引:51
作者
Matsui, H
Saeki, H
Kawai, T
Sasaki, A
Yoshimoto, M
Tsubaki, M
Tabata, H
机构
[1] Osaka Univ, Inst Sci, Ibaraki, Osaka 5670047, Japan
[2] Osaka Univ, Ind Res Stn, Ibaraki, Osaka 5670047, Japan
[3] Tokyo Inst Technol, Mat Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Earth Chem Corp, Chio Ku, Osaka 5410047, Japan
[5] Osaka Univ, Inst Sci & Ind Res Sanken, Ibaraki, Osaka 5670047, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 05期
关键词
D O I
10.1116/1.1792237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hydrothermal ZnO(0001) substrates with high crystalline quality were employed in the fabrication of polarity-controlled ZnO films using laser molecular beam epitaxy. The repolished Zn- and O-polar surfaces of ZnO substrates displayed atomically flat surfaces and high crystalline quality even after annealing at high temperatures, as evidenced from high-resolution x-ray diffraction and atomic force microscopy analyses. The electrical and optical properties of Zn-polar ZnO films were significantly improved when annealed, as opposed to polished, substrates were used. This reduced the diffusion of impurities and suppressed the formation of a disordered degenerate layer that might have formed at the interface regions between the substrate and the film. On the other hand, the characteristics of O-polar ZnO films were almost independent of the ZnO substrate pretreatment. In particular, heat-treatment of the substrate for Zn-polar rather than O-polar growth played an important role in minimizing the surface damage generated during mechanical and mechano-chemical polishing. This study paid attention to the influence of heat-treatment on Zn-polar surfaces of high crystallinity ZnO substrates, providing information toward the fabrication of homoepitaxial growth in Zn-polarity. (C) 2004 American Vacuum Society.
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收藏
页码:2454 / 2461
页数:8
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