Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

被引：11
作者：
Temcamani, Farid [1 ]
Fonder, Jean-Baptiste [2 ,3 ]
Latry, Olivier [4 ]
Duperrier, Cedric [2 ]
机构：
[1] ENSEA, Quartz Lab, F-95014 Cergy Pontoise, France
[2] ENSEA, Equipes Traitement Informat & Syst ETIS Lab, F-95014 Cergy Pontoise, France
[3] INSA Lyon, F-69100 Lyon, France
[4] Univ Rouen, Grp Phys Mat GPM Lab, CNRS, F-76000 Rouen, France
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 03期
关键词：
Ageing bench; channel temperature; electrical analysis; failure; GaN; HEMT; physical analysis; power amplifier; radar; reliability; RF; THERMOGRAPHY; VOLTAGE; RAMAN;
D O I：
10.1109/TMTT.2016.2519342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Failure mechanisms in AlGaN/GaN HEMT RF power amplifiers implemented on silicon substrate and envisaging radar operating conditions are investigated in this paper. Several power amplifier prototypes have been designed, fabricated, characterized, and tested. Ageing tests were performed in conditions as close as possible to real applications. Ageing under increased drain voltage allowed studying both thermal and electrical aspects. Characterization performed before and after ageing tests proved that ageing process is mainly due to thermal stress for the irreversible part and to trapping effects for the reversible one, respectively. This was confirmed by additional physical analysis, the results revealing strong changes of the Schottky contact. Photon emission microscopy associated with X radiography gives spatial correlation between gate degradation and evolution of the brazing interface between the transistor chip and its packaging. It also illustrates the appearance of overheating points and acceleration of the Schottky contact degradation.
引用
收藏
页码：756 / 766
页数：11
相关论文
共 30 条
[1]   12W/mm power density AlGaN/GaN HEMTs on sapphire substrate [J].
Chini, A ;
Buttari, D ;
Coffie, R ;
Heikman, S ;
Keller, S ;
Mishra, UK .
ELECTRONICS LETTERS, 2004, 40 (01) :73-74
[2]   Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers [J].
Defives, D ;
Noblanc, O ;
Dua, C ;
Brylinski, C ;
Barthula, M ;
Aubry-Fortuna, V ;
Meyer, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :449-455
[3]  
Dejaeger J. C., 2007, 11 INT MICR OPT TECH, P365
[4]  
FONDER J., 2012, EUR REL EL DEV FAIL, P2205
[5]  
Fonder JB, 2012, EUR MICROW INTEGRAT, P72
[6]   Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life [J].
Fonder, J. -B. ;
Latry, O. ;
Duperrier, C. ;
Stanislawiak, M. ;
Maanane, H. ;
Eudeline, P. ;
Temcamani, F. .
MICROELECTRONICS RELIABILITY, 2012, 52 (11) :2561-2567
[7]   Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test [J].
Fonder, J. -B. ;
Chevalier, L. ;
Genevois, C. ;
Latry, O. ;
Duperrier, C. ;
Temcamani, F. ;
Maanane, H. .
MICROELECTRONICS RELIABILITY, 2012, 52 (9-10) :2205-2209
[8]  
Fonder JB, 2014, INT CONF MULTIMED, P1405, DOI 10.1109/ICMCS.2014.6911421
[9]   Role of stress voltage on structural degradation of GaN high-electron-mobility transistors [J].
Joh, Jungwoo ;
del Alamo, Jesus A. ;
Langworthy, Kurt ;
Xie, Sujing ;
Zheleva, Tsvetanka .
MICROELECTRONICS RELIABILITY, 2011, 51 (02) :201-206
[10]   Measurement of Channel Temperature in GaN High-Electron Mobility Transistors [J].
Joh, Jungwoo ;
del Alamo, Jesus A. ;
Chowdhury, Uttiya ;
Chou, Tso-Min ;
Tserng, Hua-Quen ;
Jimenez, Jose L. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (12) :2895-2901
123