Structural and Optical Properties of Nonpolar AlN(11(2)over-bar0) Films Grown on ZnO(11(2)over-bar0) Substrates with a Room-Temperature GaN Buffer Layer

被引：5
作者：
Ueno, Kohei [1 ]
Kobayashi, Atsushi [1 ]
Ohta, Jitsuo [1 ]
Fujioka, Hiroshi [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo 1020075, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期
基金：
日本学术振兴会;
关键词：
MOLECULAR-BEAM EPITAXY; ALN; FIELDS;
D O I：
10.1143/JJAP.49.060213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown a-plane AlN films on ZnO substrates using room temperature epitaxial GaN buffer layers by pulsed laser deposition (PLD). The basal plane stacking fault density of these AlN(11 (2) over bar0) films, as estimated from X-ray rocking curve measurements, is as low as 1.1 x 10(5) cm(-1), which is attributed to the use of ZnO substrates with a small lattice mismatch. Cathode luminescence spectra measured at 300 K exhibited a clear near band-edge peak of AlN at around 5.9 eV. The use of a PLD low-temperature growth technique and ZnO substrates would be quite attractive for the fabrication of ultraviolet light-emitting devices. (C) 2010 The Japan Society of Applied Physics
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收藏
页码：0602131 / 0602133
页数：3
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