An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

被引：54

作者：

Kirk, A. P. ^{[1
]}

Milojevic, M. ^{[1
]}

Kim, J. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

基金：

美国国家科学基金会;

关键词：

alumina; atomic layer deposition; bonds (chemical); composite material interfaces; etching; III-V semiconductors; indium compounds; oxidation; passivation; spectral line breadth; X-ray photoelectron spectra; RAY-PHOTOELECTRON-SPECTROSCOPY; PASSIVATION; GASB;

D O I：

10.1063/1.3432749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped InAs(100) wafers were either passivated with sulfur from a (NH(4))(2)S(x) solution or etched with NH(4)OH and then characterized with monochromatic x-ray photoelectron spectroscopy (XPS) before and after in situ deposition of Al(2)O(3) by atomic layer deposition. Sulfur passivation minimized oxidation. Trimethyl aluminum (TMA) exposure reduced trivalent indium and arsenic oxidation states. The In(1+) chemical state persisted while elemental arsenic remained at the Al(2)O(3)/InAs interface prior to TMA exposure and possibly a mixture of As-As and As-Al bonds were present afterwards. The In 3d(5/2) peak line shape from bulk InAs differed from previous XPS experiments on epitaxial In(x)Ga(1-x)As. (C) American Institute of Physics. [doi: 10.1063/1.3432749]

引用

页数：3

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