Impact of ferromagnetic layer thickness on the spin pumping in Co60Fe20B20/Ta bilayer thin films

被引:19
作者
Hait, Soumyarup [1 ]
Husain, Sajid [2 ]
Gupta, Nanhe Kumar [1 ]
Behera, Nilamani [3 ]
Kumar, Ankit [4 ]
Gupta, Rahul [4 ]
Barwal, Vineet [1 ]
Pandey, Lalit [1 ]
Svedlindh, Peter [4 ]
Chaudhary, Sujeet [1 ]
机构
[1] Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
[2] Univ Paris Saclay, CNRS, Thales, Unite Mixte Phys, F-91767 Palaiseau, France
[3] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden
[4] Uppsala Univ, Dept Mat Sci & Engn, POB 35, S-75103 Uppsala, Sweden
关键词
BETA-TA; SYSTEM; COFEB; HALL;
D O I
10.1007/s10854-021-05876-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the tuneable spin angular momentum transfer (spin pumping) from Co60Fe20B20 (CFB) amorphous alloy into the Ta heavy metal nanolayers. All the films are grown on Si (100) substrate at room temperature using ion-beam sputtering technique. Structural studies reveal that the grown Ta films over amorphous CFB are crystalline even at ultrathin regime. The bilayers possess very low interface roughness (< 0.5 nm) and are continuous throughout the thickness range. Comparative analysis of the spin pumping in CFB (4, 6 and 8 nm) as a function of the Ta thickness (vary from 1 to 10 nm in step of 1 nm) has been performed employing ferromagnetic resonance (FMR) spectroscopy. It is observed that the effective damping increase exponentially with the increase of Ta, (i.e. follows ballistic spin transport) in two series of CFB (4 nm)/Ta (0-10 nm) and CFB(6 nm)/Ta (0-10 nm) bilayers, which is characteristic of normal spin pumping. However, the anomalous behaviour has been observed for CFB (8 nm)/Ta (0-10 nm) bilayer series where the spin current generated in Ta with the thicker CFB behaves oppositely. The results demonstrate the strong dependence of ferromagnet thickness on the spin pumping into the Ta nanolayers. This study paves the way to choose suitable ferromagnetic layer thickness for spin current-induced switching applications in spintronics.
引用
收藏
页码:12453 / 12465
页数:13
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