Evaporation and Condensation of SiO and SiO2 Studied by Infrared Spectroscopy

被引：23
|
作者：
Klevenz, M. [1 ]
Wetzel, S. [1 ]
Moeller, M. [1 ]
Pucci, A. [1 ]
机构：
[1] Kirchhoff Inst Phys, D-69120 Heidelberg, Germany
来源：
APPLIED SPECTROSCOPY | 2010年 / 64卷 / 03期
关键词：
Infrared spectroscopy; Siliconmonoxide; Thin films; THIN INSULATING FILMS; SILICON MONOXIDE; OPTICAL-PROPERTIES; SPECTRA; ABSORPTION; OXIDES; MODEL; TRANSMISSION; OXYGEN; DISKS;
D O I：
10.1366/000370210790918346
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Physical evaporation of SiO and SiO2 under ultra-high vacuum conditions was monitored in situ with infrared spectroscopy at frequencies between 450 cm(-1) and 5000 cm(-1). The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO2 evaporation, and can be described with four Brendel oscillators located at 380 cm(-1), 713 cm(-1), 982 cm(-1), and 1101 cm(-1), corresponding to typical vibration modes in SiO.
引用
收藏
页码：298 / 303
页数：6
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