Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

被引：28
作者：
Ishikawa, H
Nakamura, K
Egawa, T
Jimbo, T
Umeno, M
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 466, Japan
[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 466, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 1AB期
关键词：
GaN; Schottky diode; barrier height; effective Richardson coefficient;
D O I：
10.1143/JJAP.37.L7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 . A . cm(-2) . K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A . cm(-2) K-2.
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收藏
页码：L7 / L9
页数：3
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