A Centimeter-Scale Inorganic Nanoparticle Superlattice Monolayer with Non-Close-Packing and its High Performance in Memory Devices

被引:78
作者
Wang, Ke [1 ]
Ling, Haifeng [2 ,3 ]
Bao, Yan [2 ,3 ]
Yang, Mengting [1 ]
Yang, Yi [1 ]
Hussain, Mubashir [1 ]
Wang, Huayang [1 ]
Zhang, Lianbin [1 ]
Xie, Linghai [2 ,3 ]
Yi, Mingdong [2 ,3 ]
Huang, Wei [2 ,3 ,4 ]
Xie, Xiaolin [1 ]
Zhu, Jintao [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Chem & Chem Engn, Key Lab Mat Chem Energy Convers & Storage, Minist Educ HUST, Wuhan 430074, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Key Lab Organ Elect & Informat Displays, Nanjing 210023, Jiangsu, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Inst Adv Mat IAM, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210023, Jiangsu, Peoples R China
[4] Northwestern Polytech Univ, Shaanxi Inst Flexible Elect SIFE, Xian 710072, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
inorganic nanoparticles; liquid-liquid interface assembly; nano-floating-gate memory devices; non-close-packing; superlattice monolayer; ENHANCED RAMAN-SCATTERING; GOLD NANOPARTICLES; ARRAYS; NANOCRYSTALS; FABRICATION;
D O I
10.1002/adma.201800595
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to the near-field coupling effect, non-close-packed nanoparticle (NP) assemblies with tunable interparticle distance (d) attract great attention and show huge potential applications in various functional devices, e.g., organic nano-floating-gate memory (NFGM) devices. Unfortunately, the fabrication of device-scale non-close-packed 2D NPs material still remains a challenge, limiting its practical applications. Here, a facile yet robust rapid liquid-liquid interface assembly strategy is reported to generate a non-close-packed AuNP superlattice monolayer (SM) on a centimeter scale for high-performance pentacene-based NFGM. The d and hence the surface plasmon resonance spectra of SM can be tailored by adjusting the molecular weight of tethered polymers. Precise control over the d value allows the successful fabrication of photosensitive NFGM devices with highly tunable performances from short-term memory to nonvolatile data storage. The best performing nonvolatile memory device shows remarkable 8-level (3-bit) storage and a memory ratio over 10(5) even after 10 years compared with traditional devices with a AuNP amorphous monolayer. This work provides a new opportunity to obtain large area 2D NPs materials with non-close-packed structure, which is significantly meaningful to microelectronic, photovoltaics devices, and biochemical sensors.
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页数:8
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