Deep trench isolation for crosstalk suppression in active pixel sensors with 1.7 μm pixel pitch

被引：40

作者：

Park, Byung Jun ^{[1
]}

Jung, Jongwan ^{[1
]}

Moon, Chang-Rok ^{[1
]}

Hwang, Sung Ho ^{[1
]}

Lee, Yong Woo ^{[1
]}

Kim, Dae Woong ^{[1
]}

Paik, Kee Hyun ^{[1
]}

Yoo, Jong Ryeol ^{[1
]}

Lee, Duck Hyung ^{[1
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond Res Ctr, Memory Div, Yongin 449711, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

image sensors; CMOS image sensors; deep trench isolation (DTI); crosstalk; white spot; sensitivity;

D O I：

10.1143/JJAP.46.2454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A deep trench isolation (DTI) process with a 4 mu m deep trench has been developed and successfully applied to 5-megapixel complementary metal oxide silicon (CMOS) image sensors with a 1.7 mu m pixel pitch. It was found that from the results of simulations and experiments, DTI is very effective for reducing electrical crosstalk without degrading other pixel characteristics, such as full well capacity, sensitivity, and white spot density. Therefore, DTI could be a solution for obtaining a high performance for CMOS image sensors with a small pixel size of sub-2.0 mu m.

引用

页码：2454 / 2457

页数：4

共 7 条

[1] Crosstalk and microlens study in a color CMOS image sensor
Agranov, G
Berezin, V
Tsai, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) : 4 - 11
[2] Study of limitations on pixel size of very high resolution image sensors
Eid, ES
[J]. PROCEEDINGS OF THE EIGHTEENTH NATIONAL RADIO SCIENCE CONFERENCE, VOLS 1 AND 2, 2001, : 15 - 28
[3] High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor
Furumiya, M
Ohkubo, H
Muramatsu, Y
Kurosawa, S
Okamoto, F
Fujimoto, Y
Nakashiba, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) : 2221 - 2227
[4] Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring
Hsu, TH
Fang, YK
Yaung, DN
Wuu, SG
Chien, HC
Wang, CS
Lin, JS
Tseng, CH
Chen, SF
Lin, CS
Lin, CY
[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) : 375 - 377
[5] LEE SH, 2006, S VLSI TECH, P178
[6] MOON C, 2005, IEDM DEC, P795
[7] NOH H, 2005, IEEE WORKSH CCD AIS, P197

← 1 →