In2O3 nanotowers:: Controlled synthesis and mechanism analysis

被引：73

作者：

Yan, You-Guo ^{[1
]}

Zhang, Ye ^{[1
]}

Zeng, Hai-Bo ^{[1
]}

Zhang, Li-De ^{[1
]}

机构：

[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

CRYSTAL GROWTH & DESIGN | 2007年 / 7卷 / 05期

关键词：

D O I：

10.1021/cg0607194

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two kinds of novel In2O3 nanotowers were synthesized in an improved chemical vapor deposition (CVD) system through controlling the kinetics factors (saturation ratio). The morphologies and crystalline structures were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). A periodical one-dimensional (1-D) and persistent 0-D growth was proposed to explain the formation of nanotower I, and the formation of nanotower II was ascribed to the alternate 1-D and 0-D growth. The growth mechanism analysis was useful to realize the relation between the kinetics factors and the complex nanostructure. The synthesis of complex tower-shaped structures not only enriched the synthesis science but also provided new blocks in future architecture of functional nanodevices.

引用

页码：940 / 943

页数：4

共 40 条

[1] Fabrication and characterization of nanotubular semiconductor oxides In2O3 and Ga2O3 [J].