Dielectric properties of high permittivity ceramics based on Dy2/3CuTa4O12

被引：13

作者：

Szwagierczak, D. ^{[1
]}

Kulawik, J. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, Cracow Div, PL-30701 Krakow, Poland

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 491卷 / 1-2期

关键词：

Dy2/3CuTa4O12; ceramic; Sintering; Dielectric properties; High permittivity; Internal barrier layer capacitors; CACU3TI4O12; CERAMICS; COPPER-TITANATE; THIN-FILMS; CONSTANT; BEHAVIOR; CONDUCTIVITY; OXIDE; CCTO;

D O I：

10.1016/j.jallcom.2009.10.229

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper reports on the dielectric properties of Dy2/3CuTa4O12 ceramic-a new material exhibiting very high permittivity exceeding 10(4) at low frequencies and broad Steps in the permittivity versus temperature plots. Impedance spectroscopy studies performed in a frequency range 10 Hz to 2 MHz and within a temperature range from -160 to 650 degrees C revealed two distinct contributions in impedance and electric modulus formalisms, which were attributed to semiconducting grains and more resistive grain boundaries. Two plateaus of about 40,000 and 50 were found in the real part of the permittivity versus frequency plots. Resistances and capacitances of grains, estimated on the basis of the impedance data, are 1.5-2 orders and about 400 times, respectively, lower than those of grain boundaries. The influence of sintering temperature within a range 1180-1250 degrees C on the dielectric properties and the microstructure of the ceramics was also investigated. The permittivity values were found to increase significantly with increasing sintering temperature. The observed high dielectric constant behavior was explained in terms of Maxwell-Wagner polarization related to internal (grain boundary) barrier layer capacitance effects. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：465 / 471

页数：7

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