First-principles study of the doping effects in bilayer graphene

被引:34
作者
Mao, Yuliang [1 ]
Stocks, G. Malcolm [2 ]
Zhong, Jianxin [1 ]
机构
[1] Xiangtan Univ, Fac Mat Optoelect & Phys, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源
NEW JOURNAL OF PHYSICS | 2010年 / 12卷
基金
中国国家自然科学基金;
关键词
EPITAXIAL GRAPHENE; BERRYS PHASE; SCATTERING; BANDGAP;
D O I
10.1088/1367-2630/12/3/033046
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We used first-principles calculations to study the doping effects in bilayer graphene, focusing on Au substitute doping in the upper layer of graphene. We found that Au doping in the upper layer maintains the lattice structure of the lower graphene layer. Our study on binding energy shows that the Au-doped bilayer structure is stable with Au atom tightly confined in a small region between the upper and lower layers. Charge density analysis indicates that charge is transferred from the Au donor to the carbon atoms in the lower layer, increasing the carrier density in the lower graphene.
引用
收藏
页数:10
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共 32 条
  • [1] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
    Castro, Eduardo V.
    Novoselov, K. S.
    Morozov, S. V.
    Peres, N. M. R.
    Dos Santos, J. M. B. Lopes
    Nilsson, Johan
    Guinea, F.
    Geim, A. K.
    Castro Neto, A. H.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (21)
  • [2] New Type of Vacancy-Induced Localized States in Multilayer Graphene
    Castro, Eduardo V.
    Lopez-Sancho, Maria P.
    Vozmediano, Maria A. H.
    [J]. PHYSICAL REVIEW LETTERS, 2010, 104 (03)
  • [3] Pinning and switching of magnetic moments in bilayer graphene
    Castro, Eduardo V.
    Lopez-Sancho, M. P.
    Vozmediano, M. A. H.
    [J]. NEW JOURNAL OF PHYSICS, 2009, 11
  • [4] Carbon nanotubes randomly decorated with gold clusters: from nano2hybrid atomic structures to gas sensing prototypes
    Charlier, J-C
    Arnaud, L.
    Avilov, I. V.
    Delgado, M.
    Demoisson, F.
    Espinosa, E. H.
    Ewels, C. P.
    Felten, A.
    Guillot, J.
    Ionescu, R.
    Leghrib, R.
    Llobet, E.
    Mansour, A.
    Migeon, H-N
    Pireaux, J-J
    Reniers, F.
    Suarez-Martinez, I.
    Watson, G. E.
    Zanolli, Z.
    [J]. NANOTECHNOLOGY, 2009, 20 (37)
  • [5] Charged-impurity scattering in graphene
    Chen, J. -H.
    Jang, C.
    Adam, S.
    Fuhrer, M. S.
    Williams, E. D.
    Ishigami, M.
    [J]. NATURE PHYSICS, 2008, 4 (05) : 377 - 381
  • [6] One- and two-dimensional diffusion of metal atoms in graphene
    Gan, Yanjie
    Sun, Litao
    Banhart, Florian
    [J]. SMALL, 2008, 4 (05) : 587 - 591
  • [7] The rise of graphene
    Geim, A. K.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
  • [8] Graphene: Exploring carbon flatland
    Geim, Andrey K.
    MacDonald, Allan H.
    [J]. PHYSICS TODAY, 2007, 60 (08) : 35 - 41
  • [9] Graphene at the Edge: Stability and Dynamics
    Girit, Caglar Oe
    Meyer, Jannik C.
    Erni, Rolf
    Rossell, Marta D.
    Kisielowski, C.
    Yang, Li
    Park, Cheol-Hwan
    Crommie, M. F.
    Cohen, Marvin L.
    Louie, Steven G.
    Zettl, A.
    [J]. SCIENCE, 2009, 323 (5922) : 1705 - 1708
  • [10] Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
    Mak, Kin Fai
    Lui, Chun Hung
    Shan, Jie
    Heinz, Tony F.
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (25)