Effect of Molybdenum Content on the Optostructural, Morphological and Photoelectrochemical Properties of Bi2Se3 Thin Films

被引：4

作者：

Kharade, Suvarta D. ^{[1
]}

Pawar, Nita B. ^{[1
]}

Mali, Sawanta S. ^{[2
,3
]}

Hong, Chang K. ^{[3
]}

Bhosale, Popatrao N. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India

[2] Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India

[3] Chonnam Natl Univ, Sch Appl Chem Engn, Gwangju 500757, South Korea

来源：

EMERGING TECHNOLOGIES: MICRO TO NANO (ETMN-2017) | 2018年 / 1989卷

基金：

新加坡国家研究基金会;

关键词：

Bismusth Selenide; Molybdenum; Photoelectrochemical Cell; Molybdenum Selenide; XPS; OPTICAL-PROPERTIES; DEPOSITION; XPS;

D O I：

10.1063/1.5047694

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effect of Mo content on the optostructural and morphological properties of chemically deposited Bi2Se3 thin films were investigated. X-ray diffraction (XRD), scanning electron microscope (SEM), UV-vis spectrophotometer, and X-ray photoelectron spectroscopy analysis (XPS) were used to characterize the Bi2Se3 and Mo-doped Bi2Se3 thin films. Analysis of XRD pattern revealed that nanocrystalline nature of Bi2Se3 with rhombohedral crystal structure. After Mo doping additional diffraction peaks were observed in XRD pattern indicating the incorporation of Mo4+ ions into the Bi2Se3 lattice. It was observed that, after addition of Mo in to Bi2Se3 the original nanofibrous morphology of Bi2Se3 was retained as it is. The band gap energy of Bi2Se3 was found to be 1.48 eV. After Mo doping to the Bi2Se3 band gap energy were found to be increased up to 1.60 eV. Formation of Mo-doped Bi2Se3 thin films were confirmed by energy dispersive X-ray spectroscopy (XPS).

引用

页数：8

共 21 条

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