Coherent spin transport through a six-coordinate FeN6 spin-crossover complex with two different spin configurations

被引:1
作者
Gu, Yue [1 ]
Huang, Jing [2 ]
Hu, Yu-jie [1 ]
Li, Qun-xiang [1 ,3 ]
机构
[1] Univ Sci & Technol China, Dept Chem Phys, Hefei 230026, Anhui, Peoples R China
[2] Anhui Jianzhu Univ, Sch Mat & Chem Engn, Hefei 230601, Anhui, Peoples R China
[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Transport; Molecular switch; Spin-filtering; Electronic structure; First-principles; CHARGE-TRANSPORT; TRANSITION; CONDUCTANCE; STRAIN;
D O I
10.1063/1674-0068/cjcp1905104
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Due to the magnetic bistability, single-molecule spin-crossover (SCO) complexes have been considered to be the most promising building blocks for molecular spintronic devices. Here, we explore the SCO behavior and coherent spin transport properties of a six-coordinate FeN6 complex with the low-spin (LS) and high-spin (HS) states by performing extensive first-principles calculations combined with non-equilibrium Green's function technique. Theoretical results show that the LS <-> HS spin transition via changing the metal-ligand bond lengths can be realized by external stimuli, such as under light radiation in experiments. According to the calculated zero-bias transmission coefficients and density of states as well as the I-V curves under small bias voltages of FeN6 SCO complex with the LS and HS states sandwiched between two Au electrodes, we find that the examined molecular junction can act as a molecular switch, tuning from the OFF (LS) state to the ON (HS) state. Moreover, the spin-down electrons govern the current of the HS molecular junction, and this observed perfect spin-filtering effect is not sensitive to the detailed anchoring structure. These theoretical findings highlight this examined six-coordinate FeN6 SCO complex for potential applications in molecular spintronics.
引用
收藏
页码:579 / 585
页数:7
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