Surface electronic structure of p-type GaN(0001)

被引：22
作者：
Ryan, P
Chao, YC
Downes, J
McGuinness, C
Smith, KE
Sampath, AV
Moustakas, TD
机构：
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[3] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
来源：
SURFACE SCIENCE | 2000年 / 467卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
angle resolved photoemission; gallium nitride; hydrogen atom; low index single crystal surfaces; photoelectron emission; semiconducting surfaces; surface electronic phenomena (work function; surface potential; surface states; etc.);
D O I：
10.1016/S0039-6028(00)00820-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface electronic structure of p-type wurtzite GaN(0001) 1 x 1 grown by molecular beam epitaxy has been investigated using synchrotron radiation excited angle: resolved photoemission spectroscopy. Four discrete surface states were clearly identified and characterized. All the states were removed by exposure of the surface to atomic hydrogen. Three of the states were of p(z) orbital character, while the fourth is derived from s orbitals. Three of the surface states lie below the bulk valence band maximum throughout the surface Brillouin zone, and one surface state was observed to disperse into the bulk optical band gap. Comparison with theory suggests that this surface state is Ga-derived, consistent with a model of Ga-terminated, but N polar, GaN. The other three surface states compare well with states observed earlier from n-type GaN. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L827 / L833
页数：7
相关论文
共 20 条
[1]   The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation [J].
Bermudez, VM ;
Koleske, DD ;
Wickenden, AE .
APPLIED SURFACE SCIENCE, 1998, 126 (1-2) :69-82
[2]   Observation of highly dispersive surface states on GaN(0001)1x1 [J].
Chao, YC ;
Stagarescu, CB ;
Downes, JE ;
Ryan, P ;
Smith, KE ;
Hanser, D ;
Bremser, MD ;
Davis, RF .
PHYSICAL REVIEW B, 1999, 59 (24) :R15586-R15589
[3]   Surface and bulk electronic structure of thin-film wurtzite GaN [J].
Dhesi, SS ;
Stagarescu, CB ;
Smith, KE ;
Doppalapudi, D ;
Singh, R ;
Moustakas, TD .
PHYSICAL REVIEW B, 1997, 56 (16) :10271-10275
[4]  
DOPPALAPUDI D, COMMUNICATION
[5]   Monitoring surface stoichiometry with the (2x2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy [J].
Hacke, P ;
Feuillet, G ;
Okumura, H ;
Yoshida, S .
APPLIED PHYSICS LETTERS, 1996, 69 (17) :2507-2509
[6]   DESIGN OF A HIGH-RESOLUTION ANGLE-RESOLVING ELECTRON-ENERGY ANALYZER [J].
KEVAN, SD .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (11) :1441-1445
[7]   Cleaning of AlN and GaN surfaces [J].
King, SW ;
Barnak, JP ;
Bremser, MD ;
Tracy, KM ;
Ronning, C ;
Davis, RF ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5248-5260
[8]   Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers [J].
Okumura, H ;
Hamaguch, H ;
Ohta, K ;
Feuillet, G ;
Balakrishnan, K ;
Ishida, Y ;
Chichibu, S ;
Nakanishi, H ;
Nagatomo, T ;
Yoshida, S .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1167-1172
[9]   NItride-based semiconductors for blue and green light-emitting devices [J].
Ponce, FA ;
Bour, DP .
NATURE, 1997, 386 (6623) :351-359
[10]   Reconstructions of the GaN(000(1)over-bar) surface [J].
Smith, AR ;
Feenstra, RM ;
Greve, DW ;
Neugebauer, J ;
Northrup, JE .
PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3934-3937
12