Electrical properties of gallium oxide grown by photoelectrochemical oxidation of GaN epilayers

被引：22

作者：

Fu, DJ ^{[1
]}

Kang, TW ^{[1
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 12B期

关键词：

GaN; photoelectrochemical; oxidation; metal-oxide-semiconductor; electrical properties;

D O I：

10.1143/JJAP.41.L1437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based metal-oxide-semiconductor (MOS) capacitors were fabricated by using Ga oxide. The oxide was formed by photoelectrochemical (PEC) oxidation of GaN and was dominated by the beta-Ga2O3 phase. The electrical properties were characterized by capacitance-voltage and current-voltage measurements. The MOS structures with PEC-formed thin oxide exhibit a fixed oxide charge density of 4.8 x 10(12) cm(-2) and a density of interface states in the lower 10(12) eV(-1.)cm(-2) regime, and show stability at temperatures below 700degreesC. The leakage current in the MOS capacitors is dominated by surface injection of carriers from the gate electrode.

引用

页码：L1437 / L1439

页数：3

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