Compression-Induced Modification of Boron Nitride Layers: A Conductive Two-Dimensiona BN Compound

被引：30

作者：

Barboza, Ana P. M. ^{[1
]}

Matos, Matheus J. S. ^{[1
]}

Chacham, Helio ^{[2
]}

Batista, Ronald J. C. ^{[1
]}

de Oliveira, Alan B. ^{[1
]}

Mazzoni, Mario S. C. ^{[2
]}

Neves, Bernardo R. A. ^{[2
]}

机构：

[1] Univ Fed Ouro Preto, Dept Fis, BR-35400000 Ouro Preto, MG, Brazil

[2] Univ Fed Minas Gerais, Dept Fis, CP 702, BR-31270901 Belo Horizonte, MG, Brazil

来源：

ACS NANO | 2018年 / 12卷 / 06期

关键词：

2D materials; h-BN; rehybridization; DFT; SPM;

D O I：

10.1021/acsnano.8b01911

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ability to create materials with improved properties upon transformation processes applied to conventional materials is the keystone of materials science. Here, hexagonal boron nitride (h-BN), a large-band-gap insulator, is transformed into a conductive two-dimensional (2D) material-bonitrol that is stable at ambient conditions. The process, which requires compression of at least two h-BN layers and hydroxyl ions, is characterized via scanning probe microscopy experiments and ab initio calculations. This material and its creation mechanism represent an additional strategy for the transformation of known 2D materials into artificial advanced materials with exceptional properties.

引用

页码：5866 / 5872

页数：7

共 28 条

[1] Converting Chemically Functionalized Few-Layer Graphene to Diamond Films: A Computational Study [J].

Antipina, Liubov Yu ;

Sorokin, Pavel B. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (05) :2828-2836

[2]

Artacho E., 2008, J PHYS CONDENS MATT, V20, P6

[3] Deformation induced semiconductor-metal transition in single wall carbon nanotubes probed by electric force microscopy [J].

Barboza, A. P. M. ;

Gomes, A. P. ;

Archanjo, B. S. ;

Araujo, P. T. ;

Jorio, A. ;

Ferlauto, A. S. ;

Mazzoni, M. S. C. ;

Chacham, H. ;

Neves, B. R. A. .

PHYSICAL REVIEW LETTERS, 2008, 100 (25)

[4] Room-Temperature Compression-Induced Diamondization of Few-Layer Graphene [J].

Barboza, Ana P. M. ;

Guimaraes, Marcos H. D. ;

Massote, Daniel V. P. ;

Campos, Leonardo C. ;

Barbosa Neto, Newton M. ;

Cancado, Luiz G. ;

Lacerda, Rodrigo G. ;

Chacham, Helio ;

Mazzoni, Mario S. C. ;

Neves, Bernardo R. A. .

ADVANCED MATERIALS, 2011, 23 (27) :3014-+

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[6]

Bonnell D. A., 2001, SCANNING PROBE MICRO, P246

[7] BORON-NITRIDE NANOTUBES [J].

CHOPRA, NG ;

LUYKEN, RJ ;

CHERREY, K ;

CRESPI, VH ;

COHEN, ML ;

LOUIE, SG ;

ZETTL, A .

SCIENCE, 1995, 269 (5226) :966-967

[8] Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride [J].

DaSilva, Ashley M. ;

Jung, Jeil ;

MacDonald, Allan H. .

PHYSICAL REVIEW LETTERS, 2016, 117 (03)

[9] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].

Dean, C. R. ;

Wang, L. ;

Maher, P. ;

Forsythe, C. ;

Ghahari, F. ;

Gao, Y. ;

Katoch, J. ;

Ishigami, M. ;

Moon, P. ;

Koshino, M. ;

Taniguchi, T. ;

Watanabe, K. ;

Shepard, K. L. ;

Hone, J. ;

Kim, P. .

NATURE, 2013, 497 (7451) :598-602

[10] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

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