Magnetic domain wall engineering in a nanoscale permalloy junction

被引：18

作者：

Wang, Junlin ^{[1
,2
]}

Zhang, Xichao ^{[3
]}

Lu, Xianyang ^{[4
]}

Zhang, Jason ^{[4
]}

Yan, Yu ^{[2
]}

Ling, Hua ^{[2
]}

Wu, Jing ^{[4
]}

Zhou, Yan ^{[3
]}

Xu, Yongbing ^{[1
,2
]}

机构：

[1] Nanjing Univ, YNICS, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Univ York, Spintron & Nanodevice Lab, Dept Elect, York YO10 5DD, N Yorkshire, England

[3] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518067, Peoples R China

[4] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

MAGNETORESISTANCE; MEMORY; MRAM;

D O I：

10.1063/1.4985662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-degrees and 45-degrees domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation. (C) 2017 Author(s).

引用

页数：4

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