Lattice parameter in Si1-yCy epilayers:: Deviation from Vegard's rule

被引:84
作者
Berti, M
De Salvador, D
Drigo, AV
Romanato, F
Stangl, J
Zerlauth, S
Schaffer, F
Bauer, G
机构
[1] Univ Padua, INFM, I-35131 Padua, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] Johannes Kepler Univ, Inst Semicond Phys, A-4040 Linz, Austria
关键词
D O I
10.1063/1.121127
中图分类号
O59 [应用物理学];
学科分类号
摘要
The precise C content of a series of Si1-yCy, epilayer samples (0 < y < 0.012)was determined by resonant backscattering experiments using a He-4(+) ion beam at 5.72 MeV. This beam energy is more suitable for the determination of the C content than the previously used 4.265 MeV. From the correlation of these investigations with x-ray diffraction experiments, a significant deviation of the lattice parameter variation in S1-yCy from Vegard's rule between Si and diamond or beta-SiC was observed, which amounts up to 30% or 13%, respectively, for y < 0.012. This negative deviation is in agreement with recent theoretical predictions by Kelires. (C) 1998 American Institute of Physics.
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页码:1602 / 1604
页数:3
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