Mechanisms of SiC formation in the ion beam synthesis of 3C-SiC layers in silicon

The formation of buried epitaxial 3C-SiC films in Si(100) by ion beam synthesis at constant implantation temperatures between 400 and 600 degrees C is studied using RBS/channeling and TEM. The lower implantation temperatures are shown to be favourable for abrupt layer interfaces, but fully epitaxial layers are obtained only for the higher temperatures under the experimental conditions used. From a comparison of the different depth dependent structural states observed after implantation at different temperatures and observed after annealing and from Monte-Carlo simulations, conclusions are drawn on mechanisms contributing to SiC precipitate and SiC layer formation.