Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates

被引：0

作者：

Norman, CE

North, AJ

Burroughes, JH

Burke, T

Ritchie, DA

机构：

[1] Toshiba Cambridge Res Ctr Ltd, Cambridge CB4 4WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0EH, England

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期

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D O I：

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中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Cryogenic cathodoluminescence (CL) and electron beam induced current (EBIC) are used to investigate the band structure in novel modulation-doped lateral injection ridge lasers. EBIC successfully reveals the position and regularity of the junction between hole and electron gases on planes of differing indices, with sub-micrometre resolution. CL is able to map the carrier density in an electron gas on a very narrow (100) facet, where no measurement via electrical contacts could be made.

引用

页码：647 / 650

页数：4