Effect of Electron-Electron Interactions on the Charge Carrier Transitions in trans-Polyacetylene

被引:12
作者
Ma, Haibo [1 ,2 ,4 ]
Schollwoeck, Ulrich [3 ,5 ]
机构
[1] Nanjing Univ, Inst Theoret & Computat Chem, Key Lab Mesoscop Chem MOE, Sch Chem & Chem Engn, Nanjing 210093, Peoples R China
[2] Rhein Westfal TH Aachen, Inst Theoret Phys C, D-52056 Aachen, Germany
[3] Univ Munich, Dept Phys, D-80333 Munich, Germany
[4] Univ Munich, Arnold Sommerfeld Ctr Theoret Phys, D-80333 Munich, Germany
[5] Wissensch Skolleg Berlin, D-14193 Berlin, Germany
关键词
QUANTUM RENORMALIZATION-GROUPS; POLYENE RADICAL CATIONS; POLYACETYLENE OLIGOMERS; DOPED POLYACETYLENE; CONDUCTING POLYMERS; PERTURBATION-THEORY; METALLIC POLYMERS; 4TH GENERATION; POLARIZABILITIES; EXCITATIONS;
D O I
10.1021/jp9098039
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By employing a newly developed nonadiabatic dynamical simulation method, which is a combination of classical molecular dynamics and the adaptive time-dependent density matrix renormalization group, we investigate the dynamics of charge carrier transitions in trans-polyacetylene (PA) with the inclusion of both electron-phonon and electron-electron interactions. The calculations are performed within a modified Su-Schrieffer-Heeger model in which electron-electron interactions are taken into account via the combination with extended Hubbard model (EHM). We find that removing an electron from a trans-PA chain bearing a positively charged polaron leads to the formation of a pair of charged solitons. Furthermore, we study the effect of electron-electron interactions on such charge carrier transitions in trans-PA. Our results show that increasing the on-site Coulomb interaction and the nearest-neighbor Coulomb repulsion will not change the qualitative behavior of the transition from a polaron to a soliton pair in the evolution process but will quantitatively reduce the moving velocities of the both formed solitons significantly and change the conditions for the soliton collisions.
引用
收藏
页码:5439 / 5444
页数:6
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