A Study of GaN HEMTs Current Collapse Impacts on Doherty Multistage PA Linearity

被引：0

作者：

Murao, Yoji ^{[1
]}

Hayakawa, Makoto ^{[1
]}

Ohgami, Kazuya ^{[1
]}

Kaneko, Tomoya ^{[1
]}

机构：

[1] NEC Corp Ltd, Kawasaki, Kanagawa 2118666, Japan

来源：

2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年

关键词：

GaN HEMT; current collapse; multistage; Doherty amplifier; linearity;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of current collapse with regard to operating class of GaN HEMTs is studied. It is shown that AM-AM deviation due to current collapse is maximized in class AB, while it is reduced under both class A and class C region. A Doherty multi-stage amplifier is designed considering these effects to achieve both high efficiency and linearity. A 2W-class 1.8GHz multistage GaN Doherty PA shows PA chain efficiency of 38% with the power gain of 50.5dB. ACLR of -51dBc is obtained for 20MHz LTE carrier using a commercially available RF predistorter IC.

引用

页数：4