Molecular dynamics study of temperature effect on deformation behavior of m-plane 4H-SiC film by nanoindentation

被引:15
作者
Xue, Lianghao [1 ]
Feng, Gan [2 ,3 ]
Liu, Sheng [1 ,2 ]
机构
[1] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[3] EpiWorld Int Co LTD, Xiamen 361101, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanoindentation; Mechanical properties; Deformation behavior; Molecular dynamics; PHASE-TRANSFORMATION; SIMULATION; AMORPHIZATION; ANISOTROPY; EVOLUTION; HARDNESS;
D O I
10.1016/j.vacuum.2022.111192
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the effect of temperature on the nanoscale mechanical properties and deformation mechanism of mplane 4H-SiC film was investigated by nanoindentation. Simulation results show that the hardness decreases as the temperature increases, while the pile-up events that appear in the indentation process become more obvious. The atomic displacement and strain enhance with increasing temperature, promoting the nucleation and propagation of dislocations in the main slip system, with the formation of prismatic dislocation loops moving along the two < 1120 > directions. Moreover, increasing the temperature not only increases dislocation density but also strengthens plastic deformation. This work contributes to the comprehensive understanding of temperature effect on the mechanical properties and deformation behavior of 4H-SiC film at the nanoscale when subjected to external loads.
引用
收藏
页数:8
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