Recent Advances in Wide Bandgap Devices for Automotive Industry

被引:0
作者
Berube, Yan [1 ]
Ghazanfari, Amin [1 ]
Blanchette, Handy Fortin [2 ]
Perreault, Christian [1 ]
Zaghib, Karim [1 ]
机构
[1] Hydroquebec, Ctr Excellence Transportat Electrificat & Energy, Varennes, PQ, Canada
[2] Ecole Technol Super, Elect Engn Dept, Montreal, PQ, Canada
来源
IECON 2020: THE 46TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2020年
关键词
Wide bandgap (WBG) power semiconductor; Silicon Carbide (SiC); Gallium Nitride (GaN); automotive power electronic (APE); electric vehicles (EVs);
D O I
10.1109/iecon43393.2020.9254478
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The main barriers in the widespread adoption of electric vehicles (EVs) include limited autonomy, high up-front cost, low availability of charging infrastructure, and long charging time. Wide bandgap (WBG) semiconductors are key industry players in the electronics circuit design because they are advantageous in terms of high operating temperature, high efficiency, and low volume and weight. The WBG devices improve power density and allow power electronics (PE) circuits to reach operating points and temperatures that have not been considered before. Currently, SiC and GaN are the most viable WBG semiconductor candidates to replace Si-based devices. However, the cost, packaging limitations, reliability, safety, low manufacturing, and demand level of WBGs are issues that should be addressed; the integration of these devices into the automotive power electronic (APE) systems can then successfully be realized. This paper presents an industrial oriented overview of WBG power semiconductors including their advantages, recent progress, challenges, and development partnerships.
引用
收藏
页码:2557 / 2564
页数:8
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