Applying computational nanomaterials design to the reactive ion etching of NiO thin films -: a preliminary investigation

We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e. g. NH3, CH4). We strongly suggest the use of CH4 or any H-based gas source other than CHF3 to enhance RIE process.