Influence of temperature and plasma parameters on the properties of PEALD HfO2

被引:23
作者
Lapteva, Margarita [1 ,2 ]
Beladiya, Vivek [1 ,2 ]
Riese, Sebastian [3 ]
Hanke, Phillip [3 ]
Otto, Felix [4 ]
Fritz, Torsten [4 ]
Schmitt, Paul [1 ,2 ]
Stenzel, Olaf [2 ]
Tunnermann, Andreas [1 ,2 ]
Szeghalmi, Adriana [1 ,2 ]
机构
[1] Friedrich Schiller Univ Jena, Inst Appl Phys, Albert Einstein Str 15, D-07745 Jena, Germany
[2] Fraunhofer Inst Appl Opt & Precis Engn, Albert Einstein Str 7, D-07745 Jena, Germany
[3] Layertec GmbH, Ernst Abbe Weg 1, D-99441 Mellingen, Germany
[4] Friedrich Schiller Univ Jena, Inst Solid State Phys, Hebnholtzweg 5, D-07743 Jena, Germany
关键词
ATOMIC LAYER DEPOSITION; LASER-INDUCED DAMAGE; DIOXIDE THIN-FILMS; ION-ASSISTED DEPOSITION; OPTICAL-PROPERTIES; HAFNIUM OXIDE; ELECTRICAL-PROPERTIES; RESIDUAL-STRESS; SILICON DIOXIDE; REACTIVE EVAPORATION;
D O I
10.1364/OME.422156
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
HfO2 has promising applications in semiconductors and optics due to its high dielectric constant and high refractive index. In this work, HfO2 thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using tetrakis-dimethylamino hafnium (TDMAH) and oxygen plasma. The process optimization to obtain high quality HfO2 thin films with excellent uniformity over a 200 mm diameter is thoroughly discussed. The effects of deposition temperature and plasma parameters on the structural, mechanical, and optical properties, and the chemical composition of the films were investigated. Optimized process parameters yielding a high refractive index, high density, low impurities, low OH incorporation, low absorption in the UV spectral range, and high laser-induced damage threshold (LIDT) were selected for antireflection coatings. The HfO2 thin films were incorporated into antireflection coatings designed for the fundamental wavelength at 1064 nm and its higher harmonics up to the 4th order. (c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:1918 / 1942
页数:25
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