Highly transparent structure for nitride ultraviolet light emitting diodes

被引：12

作者：

Nishida, T

Ban, T

Kobayashi, N

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NEL Technosupport, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

ultraviolet; light emitting diode; nitride; GaN; AlGaN; AlN;

D O I：

10.1143/JJAP.42.2273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the merits of the transparent structure for the nitride semiconductor ultraviolet light emitting diodes. The ultraviolet light emitting diodes consisting of AlGaN-based active layers provide a wide spectral range from 200 to 360nm in the ultraviolet range. To produce a transparent device structure at the emission wavelength, we used sapphire substrates, AIN-template layers, AlGaN alloy buffer layers, and p-type contact layers consisting of a short period alloy superlattice, all of which are transparent to the emission. We confirmed the transparency of the device structure from the transmission spectra. The output power characteristic is improved by a factor of four due to the transparent structure. We also demonstrate an efficient ultraviolet light emitting diode grown on an AlGaN buffer layer of low dislocation density. The external quantum efficiency is 1.4%, which is superior to that of the ultraviolet light emitting diode grown on bulk GaN substrate.

引用

页码：2273 / 2277

页数：5

共 11 条

[1] FLOW-RATE MODULATION EPITAXY OF GAAS AND ALGAAS [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

YAMAUCHI, Y ;

HORIKOSHI, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :640-651

[2] High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].

Krames, MR ;

Ochiai-Holcomb, M ;

Höfler, GE ;

Carter-Coman, C ;

Chen, EI ;

Tan, IH ;

Grillot, P ;

Gardner, NF ;

Chui, HC ;

Huang, JW ;

Stockman, SA ;

Kish, FA ;

Craford, MG ;

Tan, TS ;

Kocot, CP ;

Hueschen, M ;

Posselt, J ;

Loh, B ;

Sasser, G ;

Collins, D .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367

[3] Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate [J].

Motoki, K ;

Okahisa, T ;

Matsumoto, N ;

Matsushima, M ;

Kimura, H ;

Kasai, H ;

Takemoto, K ;

Uematsu, K ;

Hirano, T ;

Nakayama, M ;

Nakahata, S ;

Ueno, M ;

Hara, D ;

Kumagai, Y ;

Koukitu, A ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2B) :L140-L143

[4]

Nishida T, 1999, PHYS STATUS SOLIDI A, V176, P45, DOI 10.1002/(SICI)1521-396X(199911)176:1<45::AID-PSSA45>3.0.CO

[5]

2-0

[6]

Nishida T, 2001, PHYS STATUS SOLIDI A, V188, P113, DOI 10.1002/1521-396X(200111)188:1<113::AID-PSSA113>3.0.CO

[7]

2-C

[8] Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 79 (06) :711-712

[9]

Nishida T, 2000, IPAP CONFERENCE SER, V1, P872

[10] Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :399-400

← 1 2 →