Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

被引：7

作者：

Miura, N. ^{[1
]}

Kozlova, N. V. ^{[1
]}

Doerr, K. ^{[1
]}

Freudenberger, J. ^{[1
]}

Schultz, L. ^{[1
]}

Drachenko, O. ^{[2
]}

Sawano, K. ^{[3
]}

Shiraki, Y. ^{[3
]}

机构：

[1] Leibniz Inst Solid State & Mat Res, D-01069 Dresden, Germany

[2] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[3] Tokyo City Univ, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2010年 / 159卷 / 1-2期

关键词：

Ge/SiGe quantum well; Magneto-spectroscopy; HETEROSTRUCTURES;

D O I：

10.1007/s10909-009-0122-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shubnikov-de Haas oscillation and cyclotron resonance were studied for high mobility p-type Ge channels in strained Ge/Si(1-x) Ge (x) quantum wells, using pulsed high magnetic fields up to 50 T. Fine quantum oscillations were observed in rho (xx) . Reflecting the complex Landau level structure in the nearly degenerate valence bands, the Fourier transform of the oscillatory spectra consists of several peaks. Cyclotron resonance was measured at photon energies between 10 and 17 meV. Two well-defined resonance peaks were observed in two samples with different x, resulting in different strains. A large non-parabolicity and large strain dependence of the effective masses were observed.

引用

页码：222 / 225

页数：4

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