Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy

被引：12
作者：
Jo, M.
Endo, M.
Kumano, H.
Suemune, I.
机构：
[1] Hokkaido Univ Kita 21, RIES, Sapporo, Hokkaido, Japan
[2] JSPS, Tokyo 1028472, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / SPEC. ISS.期
基金：
日本学术振兴会;
关键词：
impurities; metalorganic molecular beam epitaxy; quantum dots; zinc compounds; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.11.292
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Isoelectronically substitutional material systems are proposed as offering a unique possibility to study the physics of different regimes from single isoelectronic centers (ICs) to self-assembled quantum dots (QDs) within the same material combinations. Luminescence evolution of ZnSe:Te system were investigated as such isoelectronically substitutional system. A successive change in the spectral dominance of luminescence with increasing ZnTe layer thickness indicates the evolution from ICs to QDs in ZnSe:Te system. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：277 / 280
页数：4
相关论文
共 16 条
[11]   EFFECT OF DISORDER ON THE OPTICAL-SPECTRA OF WIDE-GAP II-VI SEMICONDUCTOR SOLID-SOLUTIONS [J].
PERMOGOROV, S ;
REZNITSKY, A .
JOURNAL OF LUMINESCENCE, 1992, 52 (1-4) :201-223
[12]   Oxygen isoelectronic impurities in ZnTe: Photoluminescence and absorption spectroscopy [J].
Seong, MJ ;
Miotkowski, I ;
Ramdas, AK .
PHYSICAL REVIEW B, 1998, 58 (12) :7734-7739
[13]   Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate [J].
Song, JS ;
Chang, JH ;
Hong, SK ;
Cho, MW ;
Makino, H ;
Hanada, T ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :95-103
[14]   Emission mechanism of blue and green bands in ultrathin ZnSe-ZnTe superlattices [J].
Takojima, N ;
Ishizuka, Y ;
Tsubono, I ;
Kimura, N ;
Suzuki, K ;
Sawada, T ;
Imai, K .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :489-492
[15]   ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].
THOMAS, DG ;
HOPFIELD, JJ ;
FROSCH, CJ .
PHYSICAL REVIEW LETTERS, 1965, 15 (22) :857-&
[16]   Optical transitions in the isoelectronically doped semiconductor GaP:N:: An evolution from isolated centers, pairs, and clusters to an impurity band [J].
Zhang, Y ;
Fluegel, B ;
Mascarenhas, A ;
Xin, HP ;
Tu, CW .
PHYSICAL REVIEW B, 2000, 62 (07) :4493-4500
12