Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy

被引：12
作者：
Jo, M.
Endo, M.
Kumano, H.
Suemune, I.
机构：
[1] Hokkaido Univ Kita 21, RIES, Sapporo, Hokkaido, Japan
[2] JSPS, Tokyo 1028472, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / SPEC. ISS.期
基金：
日本学术振兴会;
关键词：
impurities; metalorganic molecular beam epitaxy; quantum dots; zinc compounds; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.11.292
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Isoelectronically substitutional material systems are proposed as offering a unique possibility to study the physics of different regimes from single isoelectronic centers (ICs) to self-assembled quantum dots (QDs) within the same material combinations. Luminescence evolution of ZnSe:Te system were investigated as such isoelectronically substitutional system. A successive change in the spectral dominance of luminescence with increasing ZnTe layer thickness indicates the evolution from ICs to QDs in ZnSe:Te system. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：277 / 280
页数：4
相关论文
共 16 条
[1]   LUMINESCENCE OF BOUND EXCITONS IN TELLURIUM-DOPED ZINC SULFIDE CRYSTALS [J].
FUKUSHIMA, T ;
SHIONOYA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) :549-556
[2]   Zn-Se-Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers [J].
Gu, Y ;
Kuskovsky, IL ;
van der Voort, M ;
Neumark, GF ;
Zhou, X ;
Tamargo, MC .
PHYSICAL REVIEW B, 2005, 71 (04)
[3]   Carrier dynamics in type-II GaSb/GaAs quantum dots [J].
Hatami, F ;
Grundmann, M ;
Ledentsov, NN ;
Heinrichsdorff, F ;
Heitz, R ;
Bohrer, J ;
Bimberg, D ;
Ruvimov, SS ;
Werner, P ;
Ustinov, VM ;
Kop'ev, PS ;
Alferov, ZI .
PHYSICAL REVIEW B, 1998, 57 (08) :4635-4641
[4]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
[5]   Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition [J].
Huang, HY ;
Lin, WC ;
Lee, WH ;
Shu, CK ;
Liao, KC ;
Chen, WK ;
Lee, MC ;
Chen, WH ;
Lee, YY .
APPLIED PHYSICS LETTERS, 2000, 77 (18) :2819-2821
[6]  
JO M, UNPUB, P25329
[7]   Optical properties of δ-doped ZnSe:Te grown by molecular beam epitaxy:: The role of tellurium -: art. no. 155205 [J].
Kuskovsky, IL ;
Tian, C ;
Neumark, GF ;
Spanier, JE ;
Herman, IP ;
Lin, WC ;
Guo, SP ;
Tamargo, MC .
PHYSICAL REVIEW B, 2001, 63 (15)
[8]   RADIATIVE STATES IN TYPE-II GASB/GAAS QUANTUM-WELLS [J].
LEDENTSOV, NN ;
BOHRER, J ;
BEER, M ;
HEINRICHSDORFF, F ;
GRUNDMANN, M ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (19) :14058-14066
[9]  
Li JB, 2006, PHYS REV B, V73, DOI 10.1103/PhysRevB.73.041201
[10]   First principles calculations of ZnS:Te energy levels -: art. no. 205319 [J].
Li, JB ;
Wang, LW .
PHYSICAL REVIEW B, 2003, 67 (20)
12