Bottom-up nanostructured bulk silicon: a practical high-efficiency thermoelectric material

被引：54

作者：

Yusufu, Aikebaier ^{[1
]}

Kurosaki, Ken ^{[1
]}

Miyazaki, Yoshinobu ^{[1
]}

Ishimaru, Manabu ^{[2
]}

Kosuga, Atsuko ^{[3
]}

Ohishi, Yuji ^{[1
]}

Muta, Hiroaki ^{[1
]}

Yamanaka, Shinsuke ^{[1
,4
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Kyushu Inst Technol, Grad Sch Engn, Fukuoka 8048550, Japan

[3] Osaka Prefecture Univ, Nanosci & Nanotechnol Res Ctr, Osaka 5998570, Japan

[4] Univ Fukui, Res Inst Nucl Engn, Tsuruga, Fukui 9140055, Japan

来源：

NANOSCALE | 2014年 / 6卷 / 22期

基金：

日本科学技术振兴机构;

关键词：

P-SUPERSATURATED SILICON; DIFFRACTION-CONTRAST; POWER-GENERATION; PERFORMANCE; ALLOYS; INCLUSIONS; CONVERSION; NANOWIRES; TELLURIDE; STRAINS;

D O I：

10.1039/c4nr04470c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effectiveness of thermoelectric (TE) materials is quantified by the dimensionless figure of merit (zT). An ideal way to enhance zT is by scattering phonons without scattering electrons. Here we show that, using a simple bottom-up method, we can prepare bulk nanostructured Si that exhibits an exceptionally high zT of 0.6 at 1050 K, at least three times higher than that of the optimized bulk Si. The nanoscale precipitates in this material connected coherently or semi-coherently with the Si matrix, effectively scattering heat-carrying phonons without significantly influencing the material's electron transport properties, leading to the high zT.

引用

页码：13921 / 13927

页数：7

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